| PART |
Description |
Maker |
| GA250TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
HALF-BRIDGE IGBT DOUBLE INT-A-PAK
|
IRF[International Rectifier]
|
| DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| VII125-12G4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 125A条一（c
|
IXYS, Corp.
|
| ID621K30 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|半桥| 1KV交五（巴西）国际消费电子展| 300我（丙）
|
Accutek Microcircuit, Corp.
|
| SIM300D06AV3 |
“HALF-BRIDGE IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| DIM250PHM33-TL000 DIM250PHM33-TL000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| GP250MHB06S |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| BSM150GB120DN2E3166 150B12E2 C67076-A2112-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM100GB170DN2 100B17N2 C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BSM400GB60DN2 400B06N2 C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| GA200HS60S |
600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package 600V的直千赫的廉政（标准）半桥IGBT à - Pak封装
HALF-BRIDGE IGBT INT-A-PAK
|
Ecliptek, Corp.
IRF[International Rectifier]
|
